Measurement of the Deformation Potentials for GaAs using Polarized Photoluminescence

نویسندگان

  • R. A. Mair
  • T. Maruyama
چکیده

The deformation potentials a, b and d for GaAs have been determined from polarized photoluminescence measurements upon a set of epitaxially grown strained.GaAs structures possessing varying levels of compressive biaxial lattice strain. X-ray diffraction measurements yield values for the degree of lattice strain while the polarized photoluminescence measurements permit a separate determination of the heavy hole and light hole band energies. Correlation of these data allow determination of the deformation potentials within the context of the Orbital-Strain Hamiltonian. Submitted to Physics Letters A *Work supported by Department of Energy contracts DE-AC03-76SF00515 (SLAC) and DE-AC02-76ER00881 (VW)

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Optically oriented and detected electron spin resonance in a lightly doped n-GaAs layer

Spin resonance of localized electrons bound to donors in a specially designed n-GaAs layer has been performed at 236 MHz and 41 mT, using circular polarized light to polarize the electrons and photoluminescence to detect the electronic polarization. The polarization was diminished under the resonance condition. The electronic g factor obtained by this measurement is 20.4160.01. The resonance li...

متن کامل

Time-Dependent Thermo-Electro-Mechanical Creep Behavior of Radially Polarized FGPM Rotating Cylinder

Time-dependent creep analysis is crucial for the performance and reliability of piezoactuators used for high-precision positioning and load-bearing applications. In this study history of stresses, deformations and electric potential of hollow rotating cylinders made of functionally graded piezoelectric material (FGPM), e.g., PZT_7A have been investigated using Mendelson’s method of successive e...

متن کامل

Optically driven spin memory in n-doped InAs-GaAs quantum dots.

We show that the spin state of the resident electron in an n-doped self-assembled InAs-GaAs quantum dot can be written and read using nonresonant, circularly polarized optical pumping. A simple theoretical model is presented and accounts for the remarkable dynamics producing counterpolarized photoluminescence.

متن کامل

Midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots

We have investigated the midinfrared unipolar photoluminescence in InAs/GaAs self-assembled quantum dots. Resonant emissions between confined levels are clearly observed at low temperature at around 10 mm wavelength. The unipolar emissions are polarized either in the layer plane or along the z growth axis of the quantum dots. The emissions are associated with hole transitions that involve the g...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1997